Real experiments are expensive, time-consuming, and limited in visibility. Numerical simulation enables us to model complex multi-physics phenomena and uncover the fundamental causes of process behavior.
Semiconductor processes involve nanometer-scale phenomena where plasma, heat, chemistry, and mechanics interact simultaneously.
Each wafer costs hundreds to thousands of dollars. Equipment operation, materials, and cleanroom time add up quickly.
A single experiment takes hours to days. Result analysis and iteration can extend to weeks or months.
You cannot observe inside the chamber during processing. Only final results are measurable, not the process dynamics.
Toxic gases, high temperatures, and plasma create hazardous conditions that limit experimental flexibility.
Numerical simulation complements experiments by providing insights that are impossible or impractical to obtain otherwise.
Run thousands of virtual experiments at a fraction of the cost. No materials wasted, no equipment wear.
Iterate rapidly through parameter spaces. Find optimal conditions in days instead of months.
Visualize every variable in real-time. Understand the physics behind every outcome.
Multiple physical phenomena occur simultaneously and interact with each other, requiring integrated simulation approaches.
Electron density, ion energy, sheath voltage, RF power coupling, ionization rates
Wafer temperature distribution, plasma heating, radiative cooling, thermal gradients
Surface reaction kinetics, etch/deposition selectivity, radical generation and transport
Film stress, thermal expansion mismatch, lattice strain, delamination prediction
These fundamental equations form the mathematical foundation of semiconductor process simulation.
Describes the evolution of particle distribution functions in plasma, accounting for collisions and electromagnetic forces.
Governs gas flow dynamics in the chamber, including pressure-driven and viscous effects.
Determines temperature distribution considering conduction, heat sources, and boundary conditions.
Arrhenius-type rate equation for surface reactions, dependent on temperature, flux, and surface coverage.
Simulation doesn't replace experiments—it makes them more efficient. Use simulation to find the direction, then validate with experiments.
Launch Simulator